Toshiba Begins Test Sample Shipment of Bare Die 1200V SiC MOSFET with Low Resistance and High Reliability, for Use in Automotive Inverters

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KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed the “X5M007E120,” a blank die^[1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters^[2] with a new structure that delivers both low resistance and high reliability. Test samples are now being sent, to be tested by customers.

The reliability of conventional SiC MOSFETs is degraded by increased On-resistance when their body diodes are bipolar powered^[3] during reverse conduction operation^[4]. Toshiba SiC MOSFETs alleviate this issue with a device structure that embeds Schottky barrier diodes (SBDs) in the MOSFET to disable physical diodes, but placing the SBDs on the chip reduces the available channel area that determines the MOSFET’s on-operation resistance and increase. The chip’s On-resistance.

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The SBDs embedded in the X5M007E120 are decorated with a check pattern, not the commonly used striped pattern, an arrangement that effectively suppresses the bipolar potential of the diode body of the device, while improving the upper limit of the unipolar performance almost twice in the current field, even when taking. up in the same place to install SBDs^[5]. The channel density is also improved compared to striped lines, and the resistance per unit is lower, reduced by about 20% to 30%.^[5]. This improved performance, low On-resistance while maintaining reliability against reverse conduction performance, will save energy in inverters used to control motors, such as automotive traction inverters.

Reduced On-resistance in the SiC MOSFET causes excessive current to flow through the MOSFET during a short-circuit^[6]it reduces the short circuit intensity. Improving the conductance of embedded SBDs to improve the reliability of reverse conduction also increases the leakage current during short-circuit, and decreases the short-circuit resistance. The new bare die has a deep blocking structure^[7] which suppresses the excess current in the MOSFET and the leakage current in the SBDs during short circuit, improving its stability while maintaining excellent reliability against reverse conduction performance.

Users can customize the bare die to meet their specific design needs and find solutions for their applications.

Toshiba expects to provide engineering samples of the X5M007E120 in 2025, and begin mass production in 2026. In the meantime, it will test further improvements to the device’s features.

Toshiba will contribute to the realization of a carbon-free society by providing customers with easy-to-use, high-power semiconductors that work in areas where energy efficiency is important, such as vehicle control inverters and power control systems in electric vehicles.

Notes:
[1] Unpackaged chip product.
[2] A device that converts battery-powered DC power into AC power and controls the motors of an electric vehicle (EV) or hybrid vehicle (HEV).
[3] Bipolar operation when a forward voltage is applied to a pn diode between drain and source.
[4] A function in which current flows from the source to the drain of a MOSFET due to a voltage fluctuation in the circuit.
[5] Compared to Toshiba’s product a striped pattern is used.
[6] A phenomenon in which a long-term conduction occurs during an abnormal mode such as a control circuit failure, compared to a short-term conduction during normal switching operation. Unfailing ruggedness is required during short circuit operation.
[7] The structural feature of the device is provided to control the high electric field due to the high voltage. It greatly affects the performance of the device.

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Applications

• Auto traction inverters

Features

• Low resistance and high reliability
• Bare die because of cars
• AEC-Q100 is ideal
• Voltage rating of the drain source: V_DSS=1200V
• Average Drain current (DC): I_D=(229)A^[8]
• Low Resistance:
  R_DS(ON)=7.2mΩ (typ.) (V_GS=+18V, T_a=25°C)
  R_DS(ON)=12.1mΩ (typ.) (V_GS=+18V, T_a=175°C)

Be careful
[8] Temporary prices

Follow the link below for more on the X5M007E120 in the extensive press release.
Toshiba Begins Test Sample Shipment of Bare Die 1200V SiC MOSFET with Low Resistance and High Reliability, for Use in Automotive Inverters

Follow the link below for more on Toshiba’s SiC Power Devices.
SiC Power Devices

* Company names, product names, and service names may be trademarks of their respective companies.
* The information in this document, including product prices and specifications, service content and contact information, is current as of the date of announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading provider of advanced semiconductor and storage solutions, draws on over a century of experience to provide customers and business partners with outstanding semiconductors, system LSIs and HDD products.

Its 19,400 employees around the world share a determination to increase product value, and to encourage close cooperation with customers in co-creating value and new markets. The company looks forward to building and contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

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